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Dr. Annamaria Petrozza
Dr. Annamaria Petrozza Dr. ​Annamaria Petrozza moved to Istituto Italiano di Tecnologia as a Team Leader in January 2010 and since October 2013 she holds a Tenure Track Scientist position. Her research work mainly aims to shed light on interfacial optoelectronic mechanisms with the goal of improving efficiency and stability of solution processable semiconductors and devices, with special emphasis on highly efficient third generation solar cells.

Biography

​Annamaria Petrozza was awarded a Master of Science in Electronic Engineering at Ecole Supèrieure d’Electricité (Paris, France) in 2003 and at Politecnico of Milan in 2004 under the T.I.M.E. (Top Industrial Manager in Europe) program. In 2009 she received her PhD in Physics from the University of Cambridge (UK) with a thesis on the study of optoelectronic processes at organic and hybrid semiconductors interfaces. From July 2008 to December 2009 she worked as research scientist at the Sharp Laboratories of Europe, Ltd on the development of new market competitive solar cell technologies. In January 2010 she moved to Istituto Italiano di Tecnologia as a Team Leader and since October 2013 she holds a Tenure Track Scientist position. Her research work mainly aims to shed light on interfacial optoelectronic mechanisms with the goal of improving efficiency and stability of solution processable semiconductors and devices, with special emphasis on highly efficient third generation solar cells.

All sessions by Dr. Annamaria Petrozza

  • Day 2Monday, February 26th
Conference
9:30 am

Understanding Defect Physics in Metal-Halide Perovskites for Optimizing Optoelectronic Devices

Semiconducting metal-halide perovskites present various types of chemical interactions which give them a characteristic fluctuating structure sensitive to the operating conditions of the device, to which they adjust. This makes the control of structure-properties relationship, especially at interfaces where the device realizes its function, the crucial step in order to control devices operation. In particular, given their simple processability at relatively low temperature, one can expect an intrinsic level of structural/chemical disorder of the semiconductor which results in the formation of defects.

Here, Dr. Annamaria Petrozza will review her understanding in the identification of key parameters which must be taken into consideration in order to evaluate the suscettibility of the perovkite crystals (2D and 3D) to the formation of defects, allowing one to proceed through a predictive synthetic procedure. I will discuss the role of defect physics in determing the open circuit voltage of metal halide perovskite solar cells and present technological strategies for the optimization of devices which include: 1) the engineering of the charge extracting layer (CEL), which accounts not only for the energy level alignment between the CELs and the perovskite, but also for the quality of the microstructure of the perovskite bulk film that is driven by the substrate surface; and 2) the use of inks based on colloidal suspensions of nanoparticles which lead to a high level of control over the material quality and device reliability, and offer more versatile processing routes by decoupling crystal growth from film formation.

Auditorium between Building 4 and 5 09:30 - 10:00 Details