Atomic Layer Deposition (ALD)

Brand: Picosun

Model: N/A

Atomic layer deposition (ALD) is a highly controlled thin film deposition method, in which a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors).

Typical substrate size and type: 

  • 50-200 mm single wafers
  • 156 mm x 156 mm solar Si wafers

Processing temperature:

  • 50 – 500°C, plasma 450°C

Typical thin film materials

  • Al2O3, TiO2, SiO2, Ta2O5, HfO2, ZnO, ZrO2


  • Liquid, solid, gas, ozone, plasma