Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper (i) thiocyanate (cuscn) processed from solution at room temperature

P. Pattanasattayavong, N. Yaacobi-Gross, K. Zhao, G.O. Ngongang Ndjawa, J. Li, F. Yan , B.C. O’Regan, A. Amassian, T.D. Anthopoul
Adv. Mater., 25(10), 1504-1509, (2013)

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper (i) thiocyanate (cuscn) processed from solution at room temperature

Keywords

Inorganic compound copper  thiocyanate

Abstract

​The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V−1 s−1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

Code

DOI:  10.1002/adma.201202758

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