Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

W. Yue, M. Nikolka, M.F. Xiao, A. Sadhanala, C.B. Nielsen, A.J.P. White, H.-Y. Chen, A. Onwubiko, H. Sirringhaus, I. McCulloch
Journal of Materials Chemistry C, 4(41), 9704-9710, (2016)

Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

Keywords

Azaisoindigo conjugated polymers, High performance n-type, Film transistor applications

Abstract

Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

Code

DOI: 10.1039/c6tc03000a

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