Photo- and electroluminescence of ambipolar, high-mobility, donor-acceptor polymers
M. Held, Y. Zakharko, M. Wang, F. Jakubka, F. Gannott, J.W. Rumer, R.S. Ashraf, I. McCulloch, J. Zaumseil
Org. Electron., 32,
Donor-acceptor polymers; Ambipolar; Field-effect transistors; Electroluminescence;Photoluminescence; Polaron quenching
Donor-acceptor polymers with narrow bandgaps are promising materials for bulk heterojunction solar cells and high-mobility field-effect transistors. They also emit light in the near-infrared. Here we investigate and compare the photoluminescence and electroluminescence properties of different narrow bandgap (<1.5 eV) donor-acceptor polymers with diketopyrrolopyrrole (DPP), isoindigo (IGT) and benzodipyrrolidone (BPT) cores, respectively. All of them show near-infrared photoluminescence quantum yields of 0.03–0.09% that decrease with decreasing bandgap. Bottom-contact/top-gate field-effect transistors show ambipolar charge transport with hole and electron mobilities between 0.02 and 0.7 cm2 V−1 s−1 and near-infrared electroluminescence. Their external quantum efficiencies reach up to 0.001%. The effect of polaron quenching and other reasons for the low electroluminescence efficiency of these high mobility polymers are investigated.
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