A Solution-Doped Polymer Semiconductor: Insulator Blend for Thermoelectrics

D. Kiefer, L.Y. Yu, E. Fransson, A. Gomez, D. Primetzhofer, A. Amassian, M. Campoy-Quiles, C. Muller
Advanced Science, 4(1), (2017)

A Solution-Doped Polymer Semiconductor: Insulator Blend for Thermoelectrics

Keywords

Polymer Semiconductor, Thermoelectrics, Matrix polymer

Abstract

​Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Code

DOI: 10.1002/advs.201600203

Sources

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