Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

M.U. Chaudhry, K. Tetzner, Y.-H. Lin, S. Nam, C. Pearson, C. Groves, M.C. Petty, T.D. Anthopoulos, D.D.C. Bradley
ACS Applied Materials & Interfaces, 10 (22), pp. 18445-18449, (2018)

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Keywords

Hybrid transistors, Light-emitting transistors, Low-voltage, Metal oxide high-k dielectric, Solution-processed organic semiconductors

Abstract

We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10–2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Code

DOI: 10.1021/acsami.8b06031

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