Single crystal hybrid perovskite field-effect transistors

W. Yu, F. Li, L. Yu, M.R. Niazi, Y. Zou, D. Corzo, A. Basu, C. Ma, S. Dey, M.L. Tietze, U. Buttner, X. Wang, Z. Wang, M.N. Hedhili, C. Guo, T. Wu, A. Amassian
Nature Communicationsvolume, 9, Article number 5354, (2018)

Single crystal hybrid perovskite field-effect transistors


Perovskite-based field-effect transistors


The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm2 V−1 s−1 in p and n channel devices respectively, with 104 to 105 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.


DOI: 10.1038/s41467-018-07706-9


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