In this presentation we discuss how we leverage wafer-scale Pulsed Laser Deposition (PLD), a type of physical vapor deposition method, for the growth, study and device implementation of two types of optoelectronic thin film materials: transparent conducting oxides (TCOs) and hybrid and inorganic halide perovskites. In the first part of the presentation we discuss the advantage of PLD as a ‘damage-free’ deposition method of TCOs with high electron mobility and broadband transparency. This is demonstrated by PLD-grown Zr-doped In2O3 implemented in semitransparent halide perovskite solar cells, resulting in an improved stabilized efficiency of 15.1% [1] . In the second part, we present PLD as an alternative vacuum-, single-source deposition method of hybrid and inorganic halide perovskites. We demonstrate single-source vapor deposition of CsSnI3, MAPbI3 , MAFAPbI3 and Cs2AgBiBr6 and discuss the effects of pressure, laser ablation and target composition on the formation of stoichiometric and phase-pure films, achieving optimum control on polymorph formation and optical properties[2,3] . The effect of the contact layers on the film morphology and final device performance will be furthermore discussed. All these are important steps forward in the controlled growth and future scalability of optoelectronic materials for efficient devices such as solar cells and LEDs. [4]