Passivating contacts for silicon and perovskite solar cells


In silicon and perovskite solar cells, the presence of surface states at their electrical contacts is increasingly recognized as a key factor limiting device performance. In this presentation, first I discuss how such surface states result in Fermi-level pinning (FLP) and surface recombination. FLP impairs the ability of contact materials through their work function to induce an anticipated band bending in the photovoltaic absorber underneath, affecting charge collection. On the other hand, surface recombination inflates the open-circuit deficit WOC = Eg/q – VOC (Eq is the bandgap, q the elementary charge and VOC is the open-circuit voltage). Quite generally, for all photovoltaic technologies, a high WOC also results in a poor FF.

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