Yorgos Volonakis

Université de Rennes

Biography

Dr. G. Volonakis is a Jr. Professor of the Université de Rennes working on the development of new materials for energy generation. He completed his PhD in physics at the Aristotle University of Thessaloniki in 2014, working on the structural and electronic properties of prototype organic semiconductors for photovoltaic applications. He then joined the materials modelling and design group at the University of Oxford as a post-doctoral researcher working with Prof. F. Giustino. His main research activities involved the computational design from first-principles of novel double perovskites, and the study of the interfaces between two-dimensional materials with perovskite solar cells for achieving optimized charge extraction in solar-cells. In January 2020, he moved to France as the laurate of a “Chaire de Recherche” at the Institut des Sciences Chimiques de Rennes. His research led to the successful ‘in silico’ design of more than 4 materials that have been today synthesized and applied for various opto-electronic technologies.

All sessions by Yorgos Volonakis

Materials design and ab initio modelling of novel perovskites and perovskitoids
05:00 PM

Lead-based halide perovskites are most prominent candidates for emerging opto-electronic applications. In this talk I will overview ‘in silico’ efforts towards finding new Pb-free semiconductors that are alternatives to traditional halide perovskites, for which ab initio methods successfully revealed a series of new compounds within the so-called halide double perovskites family and vacancy ordered perovskites. Among these, I will discuss the case of Cs2AgBiBr6 which exhibits the narrower indirect band gap of 1.9 eV, and Cs2AgInCl6, the only direct band gap semiconductor, yet with a large gap of 3.3 eV. All of them exhibit low carrier effective masses and consequently, are prominent candidates for a range of opto-electronic applications such as photovoltaics, light-emitting devices, sensors, and photo-catalysts. We will specifically outline the computational ab initio design strategy that led to the synthesis of these compounds, and particularly focus on the insights we can get from first-principles calculations in order to facilitate the synthesis, improve their opto-electronic properties and the in-silico identification of compounds with properties that are similar to the lead-halide perovskites. The newly developed concept of analogs will lead us to identify a new oxide double perovskite semiconductor: Ba2AgIO6, which exhibits an electronic band structure remarkably similar to that of our recently discovered halide double perovskite Cs2AgInCl6, but with a band gap in the visible range at 1.9 eV. The developed approach will be employed to describe the opto-electronic properties of challenging complex materials like the case of Ag-Bi halide double salts, develop a consistent symmetry-based approach to model these, and employ the model to establish their potential performance as solar-cell absorbers. Finally, I will further address the exploration of the phase space of vacancy-ordered double perovskite like Cs2SnI6, Cs2TeI6 and also present the case of Zr-based compounds as stable alternates to Cs2TiX6 with X=Br,I, which exhibit lighter charge carrier effective masses. I will show state-of-the-art calculations to accurately describe their optical, excitonic properties and its fine-structure, in order to unveil the limitations and opportunities for their potential technological application.

Yorgos Volonakis

Université de Rennes

Details