Brand: Picosun

Model: N/A

Atomic layer deposition (ALD) is a highly controlled thin film deposition method, in which a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors).

Typical substrate size and type: 

• 50-200 mm single wafers
• 156 mm x 156 mm solar Si wafers

Processing temperature:

• 50 – 500°C, plasma 450°C

Typical thin film materials

• Al₂O₃, TiO₂, SiO₂, Ta₂O₅, HfO₂, ZnO, ZrO₂

Precursors

• Liquid, solid, gas, ozone, plasma