- Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors
Shibin Krishna, Yi Lu, Che-Hao Liao, Vishal Khandelwal, Xiaohang Li Applied Surface Science 599, 153901 (2022). - Ultrasensitive Flexible κ-phase Ga2O3 Solar-blind Photodetector
Yi Lu, Shibin Krishna, Xiao Tang, Che-Hao Liao, Na Xiao, Xiaohang Li ACS Applied Materials & Interfaces 14, 34844 (2022). - Growth Dynamics of Epitaxial Gallium Nitride Films Grown on c-Sapphire Substrates
Shibin Krishna, Neha Aggarwal, Lalit Goswami, Govind Gupta Book Chapter: Recent Advances in Thin Films, Materials Horizons: From Nature to Nanomaterials. Springer, Singapore 2020. - Correlation of Donor-Acceptor Pair Emission on the Performance of GaN-based UV Photodetector
Shibin Krishna, Neha Aggarwal, Abhiram Gundimeda, Alka Sharma, Sudhir Husale, K. K. Maurya, Govind Gupta, Material Science in Semiconductor Processing 98, 59-64 (2019). - Ultrafast photo-response and enhanced photo-responsivity of Indium Nitride based broad band photodetector
Shibin Krishna, Alka Sharma, Neha Aggarwal, Sudhir C. Husale and Govind Gupta, Solar Energy Materials and Solar Cells 172, 376–383 (2017). - Enhanced current transport in GaN/AlN single and double barrier hetero-structure
Shibin Krishna, Anurag G. Reddy, Neha Aggarwal, Mandeep Kaur, Dinesh Singh. Rajib Rakshit, K.K. Maurya and Govind Gupta, Solar Energy Material & Solar Cells 170, 160-166 (2017). - A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers
Neha Aggarwal, Shibin Krishna, Alka Sharma, Lalit Goswami, Dinesh Kumar, Sudhir Husale, and Govind Gupta, Advanced Electronic Materials 1700036 (2017). - Fabrication of non-polar GaN-based highly responsive and fast UV photodetector
Abhiram Gundimeda, Shibin Krishna, Neha Aggarwal, Alka Sharma, Nita Dilawar Sharma, KK Maurya, Sudhir Husale, Govind Gupta Applied Physics Letters 110, 103507 (2017). - Correlation of growth temperature with stress, defect states, and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE
Shibin Krishna, Neha Aggarwal, Monu Mishra, K. K. Maurya, Sandeep Singh, Nita Dilawar, Subramaniyam Nagarajan, and Govind Gupta Physical Chemistry Chemical Physics, 18, 8005 (2016). - Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11-20) Al2O3 substrate
Shibin Krishna, Neha Aggarwal, Monu Mishra, K. K. Maurya, Mandeep Kaur, Geetanjali Sehgal, Sukhveer Singh, Nita Dilawar, Bipin Kumar Gupta and Govind Gupta Journal of Alloys and Compounds, 658, 470–475 (2016). - Probing the correlation between structure, carrier dynamics, and defect states of epitaxial GaN film on (1120) sapphire grown by RF-molecular beam epitaxy
Shibin Krishna, Neha Aggarwal, Anurag Reddy, Palak Dugar, Monu Mishra, Lalit Goswami, Nita Dilawar, Mahesh Kumar, K. K. Maurya, and Govind Gupta RSC Advances, 5, 73261 (2015).
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